C.A. Sebenne: search on Z-Library

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1

The ordered overlayer growth of germanium on Si(111) (7×7)

P. Chen, D. Bolmont, C.A. Sebenne

Journal:

Thin Solid Films

Year:

1984

Language:

english

File:

PDF, 452 KB

english, 1984

2

Effect of temperature on the Ge/GaAs(110) interface formation

Chen Ping, D. Bolmont, C.A. Sébenne

Journal:

Surface Science

Year:

1983

Language:

english

File:

PDF, 474 KB

english, 1983

3

Glasses

Tronc, P., Bensoussan, M., Brenac, A., Sebenne, C.

Journal:

Physical Review B

Year:

1973

Language:

english

File:

PDF, 567 KB

english, 1973

4

Surface states from photoemission threshold measurements on a clean, cleaved, Si (111) surface

Sebenne, C., Bolmont, D., Guichar, G., Balkanski, M.

Journal:

Physical Review B

Year:

1975

Language:

english

File:

PDF, 453 KB

english, 1975

5

First-Order Stark Effect in Phosphorus-Doped Silicon from Photoconductivity on Impurity Levels

Guichar, G. M., Sebenne, C., Proix, F., Balkanski, M.

Journal:

Physical Review B

Year:

1972

Language:

english

File:

PDF, 330 KB

english, 1972

6

Photoemission yield under two-quantum excitation in Si

Bensoussan, M., Moison, J. M., Stoesz, B., Sébenne, C.

Journal:

Physical Review B

Year:

1981

Language:

english

File:

PDF, 262 KB

english, 1981

7

Influence of Phonons on the Impurity Photoconductivity Spectrum of Phosphorus-Doped Silicon

Guichar, G. M., Proix, F., Sebenne, C., Balkanski, M.

Journal:

Physical Review B

Year:

1972

Language:

english

File:

PDF, 417 KB

english, 1972

8

Structural and electronic properties of cleaved Si(111) upon room-temperature formation of an interface with Ag

Bolmont, D., Chen, Ping, Sebenne, C. A., Proix, F.

Journal:

Physical Review B

Year:

1981

Language:

english

File:

PDF, 605 KB

english, 1981

9

Modifications of Space Charge Layer on Inp110) Surface Induced by Atomic Hydrogen at Very Low Exposures

U. del Pennino, R. Biagi, C. ariani, L. Šiller, A. Amoddeo, F. Proix, C. A. Sébenne

Journal:

physica status solidi (a)

Year:

1997

Language:

english

File:

PDF, 176 KB

english, 1997

10

Heteroepitaxy of GaSe layered semiconductor compound on Si(111) 7 × 7 substrate: a Van der Waals epitaxy?

Le Thanh Vinh, M. Eddrief, C. Sébenne, A. Sacuto, M. Balkanski

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 1.14 MB

english, 1994

11

A transmission electron microscopy structural analysis of GaSe thin films grown on Si(111) substrates

A. Koëbel, Y. Zheng, J.F. Pétroff, M. Eddrief, Le Thanh Vinh, C. Sébenne

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 664 KB

english, 1995

12

Raman scattering from localized vibrational modes of boron impurities in silicon

W. Nazarewicz, M. Balkanski, J.F. Morhange, C. Sébenne

Journal:

Solid State Communications

Year:

1971

Language:

english

File:

PDF, 160 KB

english, 1971

13

Structure and electronic properties of cleaved Si(111) upon Ge adsorption

P. Chen, D. Bolmont, C. Sébenne

Journal:

Solid State Communications

Year:

1982

Language:

english

File:

PDF, 245 KB

english, 1982

14

Effect of surface reconstruction on the adsorption of Ge on clean Si(111)

Ping Chen, D. Bolmont, C.A. Sebenne

Journal:

Solid State Communications

Year:

1983

Language:

english

File:

PDF, 217 KB

english, 1983

15

Room temperature interaction of ionised nitrogen with cleaved GaAs

A El Khalki, F Proix, CA Sébenne

Journal:

Year:

1989

Language:

english

File:

PDF, 371 KB

english, 1989

16

p-type overdoping at clean Si(111) surfaces upon vacuum annealing

S Bensalah, J.-P Lacharme, C.A Sébenne

Journal:

Year:

1990

Language:

english

File:

PDF, 143 KB

english, 1990

17

Preface

M. Balkanski, C. Sébenne

Journal:

Surface Science Letters

Year:

1980

Language:

english

File:

PDF, 60 KB

english, 1980

18

Electronic properties of Ga/GaAs(110) upon interface formation

D. Bolmont, P. Chen, C.A. Sébenne

Journal:

Surface Science Letters

Year:

1982

Language:

english

File:

PDF, 61 KB

english, 1982

19

Investigation of the Cu/GaAs(110) interface formation

D. Bolmont, V. Mercier, P. Chen, H. Lüth, C.A. Sébenne

Journal:

Surface Science Letters

Year:

1983

Language:

english

File:

PDF, 130 KB

english, 1983

20

Effect of temperature on the Ge/GaAs(110) interface formation

Ping Chen, D. Bolmont, C.A. Sébenne

Journal:

Surface Science Letters

Year:

1983

Language:

english

File:

PDF, 42 KB

english, 1983

21

Room temperature adsorption and growth of Ga and In on cleaved Si(111)

D. Bolmont, P. Chen, C.A. Sébenne, F. Proix

Journal:

Surface Science Letters

Year:

1984

Language:

english

File:

PDF, 65 KB

english, 1984

22

Electronic properties of cleaved Si(111) upon room-temperature deposition of Au

A. Taleb-Ibrahimi, C.A. Sébenne, D. Bolmont, P. Chen

Journal:

Surface Science Letters

Year:

1984

Language:

english

File:

PDF, 55 KB

english, 1984

23

Effect of Cu deposition on structural and electronic properties of cleaved Si(111) surfaces

A. Taleb-Ibrahimi, V. Mercier, C.A. Sébenne, D. Bolmont, P. Chen

Journal:

Surface Science Letters

Year:

1985

Language:

english

File:

PDF, 43 KB

english, 1985

24

Investigation of the Ag/InP(110) interface formation

P. Maigné, C.A. Sébenne, A. Taleb-Ibrahimi

Journal:

Surface Science Letters

Year:

1985

Language:

english

File:

PDF, 48 KB

english, 1985

25

Adsorption of Sn on cleaved Si(111) surfaces

A. Taleb-Ibrahimi, C.A. Sebenne, F. Proix, P. Maigne

Journal:

Surface Science Letters

Year:

1985

Language:

english

File:

PDF, 131 KB

english, 1985

26

Effect of valency in metal adsorption on Si(111): The case of Sb on the cleaved surface

A. Taleb-Ibrahimi, C.A. Sébenne

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 51 KB

english, 1986

27

Effect of room-temperature adsorption of Sn on Si(100) surface properties

I. Andriamanantenasoa, J.P. Lacharme, C.A. Sébenne

Journal:

Surface Science Letters

Year:

1987

Language:

english

File:

PDF, 46 KB

english, 1987

28

√3×√3 reconstruction along the (111) face of highly Boron-doped Si upon vacuum annealing

S. Bensalah, J.P. Lacharme, C.A. Sébenne

Journal:

Surface Science Letters

Year:

1989

Language:

english

File:

PDF, 46 KB

english, 1989

29

First steps of the build-up of the Si3N4/Ga0.47In0.53As interface by UV-induced chemical vapor deposition

J.M. Moison, F. Houzay, F. Barthe, C.A. Sébenne

Journal:

Surface Science Letters

Year:

1991

Language:

english

File:

PDF, 79 KB

english, 1991

30

Effect of NH3 on Si(100) vicinal surfaces

S.M. Cherif, J.-P. Lacharme, C.A. Sébenne

Journal:

Surface Science Letters

Year:

1991

Language:

english

File:

PDF, 74 KB

english, 1991

31

A photoemission study of ammonia adsorption on Si(100)2×1 and Si(111)2×1 surfaces

J.L. Bischoff, L. Kubler, D. Bolmont, C.A. Sébenne, J.-P. Lacharme, J.E. Bonnet, K. Hricovini

Journal:

Surface Science Letters

Year:

1993

Language:

english

File:

PDF, 76 KB

english, 1993

32

Clean Si(110): a surface with intrinsic or extrinsic defects?

N. Safta, J.-P. Lacharme, C.A. Sébenne

Journal:

Surface Science Letters

Year:

1993

Language:

english

File:

PDF, 69 KB

english, 1993

33

Local roughness and surface states on Si(001): Analysis of vacuum annealings and oxygen adsorption-desorption processes

C.A. Sébenne, J.P. Lacharme, I. Andriamanantenasoa, M. Khial

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 457 KB

english, 1989

34

Interface formation on n- and p-CdTe(110) surfaces with Cu and Au

B.A. Orlowski, J.P. Lacharme, C.A. Sébenne, S. Bensalah

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 426 KB

english, 1989

35

Electronic properties of clean CdSe surfaces upon Fe adsorption

B.A. Orlowski, J.P. Lacharme, C.A. Sébenne

Journal:

Applied Surface Science

Year:

1992

Language:

english

File:

PDF, 171 KB

english, 1992

36

Morphological effect of a clean Si surface on NH3 dissociative adsorption

S.M. Chérif, J.-P. Lacharme, C.A. Sébenne

Journal:

Applied Surface Science

Year:

1992

Language:

english

File:

PDF, 277 KB

english, 1992

37

Preface

C. Sébenne, J. Lecante, M. Balkanski

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 65 KB

english, 1993

38

Early stages of H2O adsorption on clean Si(100)

J.P. Lacharme, C. Sébenne, S.M. Chérif, M. Chikhi, N. Safta, M.A. Zaïbi

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 374 KB

english, 1993

39

Study of the heterointerfaces InSe on GaSe and GaSe on InSe

D. Fargues, L. Brahim-Otsmane, M. Eddrief, C. Sébenne, M. Balkanski

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 716 KB

english, 1993

40

Surface electronic properties of GaSe-covered Si(111) upon UHV thermal desorption of the GaSe epitaxial layer

H. Reqqass, J.-P. Lacharme, C.A. Sébenne, M. Eddrief, V. Le Thanh

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 325 KB

english, 1996

41

Interaction of InP(110) with atomic hydrogen: a stretching mode investigation

Umberto del Pennino, Carlo Mariani, Antonino Amoddeo, François Proix, Claude Sébenne

Journal:

Journal of Electron Spectroscopy and Related Phenomena

Year:

1993

Language:

english

File:

PDF, 571 KB

english, 1993

42

Electronic states on clean Si(110)16×2 and Si(110)2×3-Sb surfaces by photoeemission and optical spectroscopy

A. Cricenti, P. Perfetti, B. Nesterenko, G. LeLay, C. Sebenne

Journal:

Journal of Electron Spectroscopy and Related Phenomena

Year:

1995

Language:

english

File:

PDF, 374 KB

english, 1995

43

High resolution syncrotron radiation Si 2p core-level spectroscopy of Si(110)16x2

A. Cricenti, G. Le Lay, V. Yu Aristov, B. Nesterenko, N. Safta, J.P. Lacharme, C.A. Sebenne, A. Taleb-Ibrahimi, G. Indlekofer

Journal:

Journal of Electron Spectroscopy and Related Phenomena

Year:

1995

Language:

english

File:

PDF, 296 KB

english, 1995

44

Electron states at abrupt metal-GaAs(110) interfaces

D. Bolmont, P. Chen, V. Mercier, C.A. Sebenne

Journal:

Year:

1983

Language:

english

File:

PDF, 223 KB

english, 1983

45

Hydrogen action in the surface space charge region of highly doped silicon

A. Akremi, J.P. Lacharme, C.A. Sébenne

Journal:

Physica B: Condensed Matter

Year:

1991

Language:

english

File:

PDF, 254 KB

english, 1991

46

HREELS investigation of the first stage of interaction of atomic hydrogen with GaAs(1 1 0) surfaces

U. del Pennino, Carlo Mariani, A. Amoddeo, F. Proix, C.A. Sébenne

Journal:

Physica B: Condensed Matter

Year:

1991

Language:

english

File:

PDF, 317 KB

english, 1991

47

Stress relaxation at forming GaSe–Si(1 1 1) interfaces

K Amimer, M Eddrief, C.A Sébenne

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 120 KB

english, 2000

48

Si(110)16 × 2 and Si(110)2 × 3-Sb surfaces studied by photoemission and optical spectroscopy

A. Cricenti, P. Perfetti, B. Nesterenko, G. LeLay, C. Sebenne

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 405 KB

english, 1996

49

Valence band of Cd1−xFexSeFe in resonant photoemission spectra

B.A. Orlowski, B.J. Kowalski, N. Barrett, D. Martinotti, C. Guillot, J.-P. Lacharme, C.A. Sébenne

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 292 KB

english, 1996

50

Influence of surface reconstruction on MBE growth of layered GaSe on Si(111) substrates

H. Reqqass, J.-P. Lacharme, M. Eddrief, C.A. Sébenne, V. Le Thanh, Y.L. Zheng, J.-F. Pétroff

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 457 KB

english, 1996

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